Table 3 Absorptivity of HfxSi1−xO2 film annealed at different temperatures.
From: Interface and material engineering for zigzag slab lasers
HfxSi1−xO2 Film | Unannealed | Annealed at 400 deg | Annealed at 500 deg | Annealed at 600 deg |
|---|---|---|---|---|
Absorptivity (cm−1) | 2.3 | 5.4 × 10−1 | 4.5 × 10−2 | 4.1 × 10−2 |
