Figure 5

SEM images of the surface of the semiconductive inside part (a) and surface nitrided layer (b) after polishing. The number density of micro-sized voids in the inside part was lower than that in the surface nitrided layer.
SEM images of the surface of the semiconductive inside part (a) and surface nitrided layer (b) after polishing. The number density of micro-sized voids in the inside part was lower than that in the surface nitrided layer.