Figure 2
From: Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors
Output characteristics of silicon nanowire transistors at various temperatures. (a) Drain-source current (Ids) vs. drain-source voltage (Vds) characteristics of the device with Vgs increasing from −0.8 V to 0.4 V. (b) Breakdown voltage decreases as temperatures increase from 4.3 K to 300 K at Vgs = 0.4 V. Breakdown voltage is defined as the voltage at which the slope of the output curve reaches 1.0 × 10−5A/V.
