Figure 3
From: Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors
Drain-voltage-controlled sign of magnetoresistance. (a) Ids as a function of Vds with different magnetic fields in the off state of SNWT at 4.3 K. (inset) The sign of the MR changes as the drain voltage increases, demonstrating that the internal dynamic changes as the drain voltage increases. (b) Negative MR in the saturation region due to the suppression of a magnetic field on quantum interference effects. (c) Positive MR in the breakdown region is induced by an external magnetic field changing the space charge region.
