Figure 4
From: Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications

STDP window of Cu/PPX/ITO memristive structures (for various initial conductance values) obtained with heteropolar (a) bi-rectangular and (b) bi-triangular spike pulses shown in the figure insets. Post-synaptic spikes were applied after (before) pre-synaptic ones with a varying delay time Δt. Every point of the curves is a median of 10 recorded experimental values.