Figure 4 | Scientific Reports

Figure 4

From: Probing Charge Transport Difference in Parallel and Vertical Layered Electronics with Thin Graphite Source/Drain Contacts

Figure 4

Power spectral densities of current fluctuation (SI) for (a) parallel and (d) vertical conducting channels as a function of frequency at 100 K. Dashed lines in (a,d) denote ideal 1/f dependence. (b,e) SI as a function of Ids at different frequencies for (b) parallel and (e) vertical conducting channels. Dashed lines in (b,e) denote the relationship \({S}_{I}\propto {I}_{ds}^{\alpha }\). (c,f) SI values normalized by the square of Ids at different Vds values for (c) parallel and (f) vertical conducting channels.

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