Figure 2 | Scientific Reports

Figure 2

From: Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices

Figure 2

Cryogenic characterization of a standalone SHE-MTJ device. (a) SHE-MTJ multilayer consisting of a spin Hall channel, Hf spacer and MTJ stack pinned by a synthetic antiferromagnetic (SAF) structure. (b) Magnetic minor loop of the MTJ with a 3 µA sense current. The dotted line shows the center of the loop (stray field). (c) Switching probability (encoded by the color) as a function of pulse amplitude and duration for P to AP (top) and AP to P (bottom). Blue dots are points at 50% switching probability which are fitted by the macrospin model (blue curves).

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