Figure 4
Magnetoelectric spintronics with ferromagnetic amorphous FDTO thin films. (a) HRTEM image of the interface between amorphous FDTO deposited at 2 × 10−6 Torr at room temeprature on crystalline BFO. (b) Magnetic moment (emu/cm3) loops taken at room temperature, showing enhanced coercivity of the FDTO/BFO film (red) as compared to the FDTO/quartz (blue), demonstrating magnetic coupling between FDTO and BFO thin film at room temperature. (c) Schematic of GMR heterostructure used to study ME switching capabilities of amorphous FDTO. (d) GMR signal as a function of applied magnetic field at room temperature showing change in the GMR signal upon switching BFO ferroelectric polarization from one state to another with the application of +7 V (green) to −8V (blue). (e) Schematic of a-FDTO/BFO capacitor used to test the robustness of FDTO layer as a top electrode for BFO. (f) Ferroelectric hysteresis loop of the capacitor in (e) at room temperature showing nearly rectangular closed hysteresis. (g) Fatigue test of the capacitor in (e) showing stable polarization for ~1010 cumulative switching cycles.
