Figure 2
From: Increased static dielectric constant in ZnMnO and ZnCoO thin films with bound magnetic polarons
Modelled static dielectric constant of ZnO (°), ZnCoO (▫), and ZnMnO (◊) for top contact area (a) A1 [5.026 × 10−7 m2] and (c) A2 [2.827 × 10−7 m2]. The variation of the static dielectric constant which is extracted from CZnO used for modelling [1 ± (Δ/2)] × CZnO (s.a. error of CZnO in Table 1) is indicated as an error bar. Samples grown under low oxygen partial pressure (LP) with 6.50 × 10−3 mbar and under high oxygen partial pressure (HP) samples with 3.91 × 10−2 mbar are shown in open and closed symbols respectively. (b) Equivalent circuit model for Al/ZnO/Si3N4/p-Si/Au MSIS structure at inversion regime (Fig. 1(c)).
