Table 2 The fitting results of parameters in Eq. (1).

From: Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Samples

As grown

RTA 600

RTA 700

RTA 800

Eg(0) (eV)

1.4074 ± 0.0001

1.4108 ± 0.0001

1.4133 ± 0.0001

1.4274 ± 0.0001

S

2.56 ± 0.01

2.57 ± 0.01

2.59 ± 0.01

2.57 ± 0.02

 < ħω > (meV)

21.02 ± 0.16

21.45 ± 0.15

21.52 ± 0.14

23.14 ± 0.27

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