Table 3 The material parameters of GaAs, GaSb and AlAs.

From: Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

 

a (Ǻ)

C11 (1011dyn cm−2)

C12 (1011dyn cm−2)

ac (eV)

av (eV)

b (eV)

GaAs

5.6532

11.9

5.38

− 6.3 ~ − 18.3

− 0.06 ~ − 2.1

− 1.16 ~ − 2.1

GaSb

6.0959

8.834

4.023

− 7.5

− 0.8

− 1.8 ~ − 2.0

AlAs

5.6611

–

–

–

–

–

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