Figure 2
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
(a) XRD analysis and reciprocal space mapping (RSM) of the formation of a relaxed single-crystalline Ge (100) layer on the wafers and (b) RSM pattern of the Ge/Si multilayers grown two-dimensionally on the wafers.
