Figure 7
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
C–V characteristics of capacitors fabricated using the TiN/Y2O3 gate stack process.
Figure 7 | Scientific Reports
From: Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
C–V characteristics of capacitors fabricated using the TiN/Y2O3 gate stack process.
