Figure 5 | Scientific Reports

Figure 5

From: NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Figure 5

(a) The I–V characteristics of p-GeSe/n-MoSe2 heterojunction diode under dark and variable intensities. (b) The external quantum efficiency EQE function of incident power. (c) The time-dependent photoresponse of p-GeSe/n-MoSe2 heterojunction diode under illuminations with different laser light (@850 nm) intensity at Vds = 0 V. (d) The rise time and decay time.

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