Table 2 Parameters obtained by fitting our model to the experimental FMR spectra.

From: Room-temperature spin injection from a ferromagnetic semiconductor

μ0ΔHBiSb/GaFeSb (mT)

μ0ΔHGaFeSb (mT)

μ0h (mT)

μ0HR (mT)

μ0MS (mT)

γ × 1011 (T−1 s−1)

ω × 1010 (s−1)

g factor

35 ± 0.5

32 ± 0.5

0.055

290

56 ± 2

1.84 ± 0.02

5.74

2.09 ± 0.03

  1. ΔHBiSb/GaFeSb and ΔHGaFeSb are the FMR spectral linewidths for sample A and sample B when magnetic field H // \([{1}\overline{\text{1}}{{0}}]\), respectively; μ0h, μ0HR, ω, and g are the microwave magnetic field, resonance field, angular microwave frequency, and g factor, respectively. γ = B/ is the gyromagnetic ratio and μ0MS is the saturation magnetization measured by SQUID.