Table 3 The bandgap values of halogen dopants in interstitial and oxygen position at 1.38% and 2.08% concentrations.

From: Optimization of the hydrogen response characteristics of halogen-doped SnO2

Defect case

Bandgap of 1.38% concentration (eV)

Bandgap of 2.08% concentration (eV)25

Fi:SnO2

3.00

3.10

Fo:SnO2

3.00

2.90

Cli:SnO2

2.54

2.85

CloSnO2

2.90

2.70

Bri:SnO2

2.91

2.90

Bro:SnO2

2.84

2.71

Ii:SnO2

2.45

2.62

Io:SnO2

2.95

2.61

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