Figure 5 | Scientific Reports

Figure 5

From: Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In2Se3/Au contacts

Figure 5

Transport properties of α-In2Se3/Au field-effect transistor with a channel length of 5 nm. Schematic cross-sectional view of (a) Up-In2Se3/Au and (b) Dw-In2Se3/Au. The red and black arrows show the pathway of electron injection from Au to α-In2Se3 at interfaces A and B, respectively. \(\Phi_{{\text{V}}}\) and \(\Phi_{{\text{L}}}\) represent the SBH in the vertical and lateral direction, respectively. Local device density of states (LDDOS) and transmission spectra of (c) Up-In2Se3/Au and (d) Dw-In2Se3/Au under zero bias.

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