Figure 4
From: Distributions of easy axes and reversal processes in patterned MRAM arrays

(a) The angular variation in the coercivity for 20 and 6 nm pillars with a t\(_{\text{FL}}\) of 1.9 nm with a fit to Eq. (5). (b) The easy axis distributions as function of applied field angle for the 20 nm pillars and (c) 60 nm with varying t\(_{\text{FL}}\). (d) Time dependence measurements at varying applied fields for the (d) 20 nm and (e) 60 nm pillars with t\(_{\text{FL}}\) = 1.9 nm . (f) The dependence of H\(_{\mathrm a}\) on ln(t) to reach a specific magnetic moment, the gradient of which gives H\(_{\mathrm f}\), where m = − 14.5\(\mu \) emu and m = − 1.45\(\mu \) emu emu for the two samples respectively denoted by the dotted line.