Figure 2 | Scientific Reports

Figure 2

From: Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition

Figure 2

Ultrafast transient absorption spectra of p-TlBiSe2/Ni80Fe20/p-Si film from 400 to 800 nm wavelength in AMF and PMF. (a, b) show the ultrafast surface of examined heterostructure while corresponding insets represent TlBiSe2 band structure in AMF and PMF, respectively. (c, d) show TA spectra with varying probe delay in AMF and PMF, respectively. (e, f) show kinetic profiles in AMF and PMF, respectively. ( The representation of the heterostructure for this characterization is shown as Fig. 8 in experimental section).

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