Table 2 List of derived parameters for p-TlBiSe2/Ni80Fe20/p-Si heterostructure from the kinetic fittings of TA spectra.

From: Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition

TlBiSe2/Ni80Fe20 /p-Si (in AMF)

TlBiSe2/Ni80Fe20 /p-Si (in PMF)

Wavelength(λ) nm

E(ev) = 1240/ λ

τ1

τ2

τ3

Wavelength (λ)nm

E(ev) = 1240/λ

τ1

τ2

τ3

505 (TA) (1.96 ps)

2.45

257 ps

1.99 ns

 

505 (TA) (2.45 ps)

2.45

1.4 ps

15.8 ps

 

615 (GSB) (1.33 ps)

2.02

43 ps

6.8 ps

510 fs

650(GSB) (1.04 ps)

1.91

6.2 ps

708.3 fs

6.2 ps

770 (GSB)

1.63

2.63 ns

2.26 ns

3.6 ns

760 (TA)

1.63

1.4 ps

15.86 ps

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