Fig. 6
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
I-V characteristics at different magnetic fields for sample B (a) and C (b). (c) Magnetic field dependence of the voltage at \(\:0.8\:K\) and \(\:23.75\:\mu\:A\) for sample B. Blue arrows indicate the position of the voltage minima. (d) Magnetic field dependence of the voltage at \(\:0.8\:K\) and \(\:5.20\:\mu\:A\) for sample C. (e) Zoom into the dashed region indicated in (d).
