Fig. 9
From: FIB-fabrication of superconducting devices based on Bi2Se3 junctions
SEM micrograph of sample C after fabricating a hole in the center of the remaining junction. (b) Magnetic field dependence of the critical current measured at \(\:T=0.8\:K\) in the magnetic field range from \(\:-2\:T\) to \(\:2\:T\). (b) Magnetic field dependence of the critical current measured at \(\:T=0.8\:K\) plotted from from \(\:-0.9\:T\) to -0.6\(\:\:T\) with fitting to model described by Eq. 1.
