Table 1 List of parameters used.

From: The characteristics and polarization effects in AlInGaN barrier GaN MISHEMT with various compositions of group III elements

Parameters

Value

References

Donor interface traps energy (eV)

0.3

23

Donor interface traps (cm−2)

2.0 × 1013

29

Acceptor buffer traps(cm−3)

5.6 × 1016

28

Acceptor buffer traps energy (eV)

0.45

28

Gate work function (eV)

5.0

31

Nonlocal tunneling mass for source and drain

0.001m0

11,32

Mobility (µmax) (cm2V−1s−1)

1800

Fitting