Fig. 7
(a) C-V hysteresis at varying sweep voltage (± 1 V to ± 7 V) and (b) memory window Vs sweeping voltage of NiO NPs decorated MgZnO TF device.
Fig. 7 | Scientific Reports
(a) C-V hysteresis at varying sweep voltage (± 1 V to ± 7 V) and (b) memory window Vs sweeping voltage of NiO NPs decorated MgZnO TF device.
