Table 2 Summary of 2D FETs in different reports
From: Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing
Materials | Insulator material | Hysteresis (V) | Threshold voltage (V) | Mobility (cm2/V·s) | On/Off ration | Threshold voltage shift (V) | Reference |
|---|---|---|---|---|---|---|---|
MoS2 | HfO2 | – | ~ −3.5 | 217 | ~106 | – | |
Black phosphorus | SiO2 | – | ~ −17.5 | ~1000 | ~105 | – | |
MoS2 | SiO2 | ~20 | ~5 | 25.7 | ~105 | ~15 | |
MoS2 | SiO2 | ~25 | ~ −15 | 10 | – | – | |
InSe | SiO2 | ~15 | ~ −10 | 1006 (50 K) | ~107 | – | |
WS2 | SiO2 | – | ~20 | ~45 | ~107 | – | |
GeP | SiO2 | – | ~ −25 | 7.5 | ~105 | – | |
In-InSe | SiO2 | >10 | ~ −20 | 3700 | ~107 | – | |
SnS2 | SiO2 | – | ~10 | ~50 | ~107 | – | |
InSe | PMMA/Al2O3 | – | ~ −3 | 1055 | ~107 | – | |
InSe | SiO2 | – | ~20 | 79.5 | ~107 | ~9 | |
InSe | PMMA or Si3N4 | – | >10 | ~1000 (four-terminal) | – | – | |
InSe | PMMA/HfO2 and PMMA encapsulation | 0.4 | −2.5 | 1206 | ~107 | 0.6 | This work |
