Fig. 3: Electron microscopy studies of as-grown h-GaTe and m-GaTe on Si. | npj 2D Materials and Applications

Fig. 3: Electron microscopy studies of as-grown h-GaTe and m-GaTe on Si.

From: Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase

Fig. 3

a, f Bright field plan-view micrograph of as-grown h-GaTe and m-GaTe (h-GaTe after RTA annealing). The scale bar is 100 nm and 10 nm, respectively. The insets (b, g) show zoomed fragments (scale bar is 5 nm and 1 nm, respectively) and (c, h) diffraction patterns obtained along Si(111) (scale bar is 5 nm−1). d, i Cross sectional high-resolution (HR)-TEM image of as-grown Si/h-GaTe and Si/m-GaTe interfaces and near interface regions, respectively (scale bar is 1 nm). Panel (d) illustrates the misfit dislocations arisen at the interface between Si(\(11\bar{2}\)) and nonrotated h-GaTe(\(1\bar{1}00\)). e ϵxx component of the strain field around the misfit dislocation core. The color scale indicates strain changes of − 20% to 20% (scale bar is 0.5 nm). Panel (i) shows the codirection of m-GaTe[020] and Si[\(11\bar{2}\)] with “twin-like” boundary highlighted by white solid line.

Back to article page