Publisher Correction: High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

1. These authors contributed equally: Mayukh Das, Dipanjan Sen.

Authors and Affiliations

1. Engineering Science and Mechanics, Penn State University, University Park, PA, USA

   Mayukh Das, Dipanjan Sen, Najam U Sakib, Harikrishnan Ravichandran, Yongwen Sun, Zhiyu Zhang, Subir Ghosh, Pranavram Venkatram, Shiva Subbulakshmi Radhakrishnan, Muhtasim Ul Karim Sadaf, Andrew Pannone, Ying Han, Yang Yang & Saptarshi Das

2. Department of Physics, Penn State University, University Park, PA, USA

   Alexander Sredenschek, Zhuohang Yu, David Emanuel Sanchez & Mauricio Terrones

3. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague, Czech Republic

   Kalyan Jyoti Sarkar, Kalaiarasan Meganathan & Zdenek Sofer

4. Department of Physics, Harcourt Butler Technical University, Kanpur, India

   Divya Somvanshi

5. Materials Science and Engineering, Penn State University, University Park, PA, USA

   Mauricio Terrones & Saptarshi Das

6. Nuclear Engineering, Penn State University, University Park, PA, USA

   Yang Yang

7. Electrical Engineering, Penn State University, University Park, PA, USA

   Yang Yang & Saptarshi Das

Corresponding author

Correspondence to Saptarshi Das.

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