Extended Data Fig. 1: Stochasticity of dielectric breakdown voltages.
From: Echo state graph neural networks with analogue random resistive memory arrays
a, Distribution of the dielectric breakdown voltages in a 20×20 resistive memory array. The resistance of all pristine cells is ~10 MΩ. Linear voltage sweeps starting from 3 V with a step 0.05 V are applied to all cells. The breakdown voltage is defined as the smallest voltage which makes the cell resistance smaller than 20 kΩ. b, The corresponding histogram of the dielectric breakdown voltages in a, which follows a quasi-Normal distribution. The breakdown voltage provides a knob to tune the sparsity of the random resistive memory arrays. c-d, The optimal sparsity was searched in software, which was translated to the programming voltage according to the measured breakdown voltage distribution before being physically applied to the resistive memory array. e, The resultant sparsity (the proportion of devices without breakdown) of the random conductance matrix is close to the optimal sparsity identified in software.
