Fig. 18: Thermal admittance spectroscopy measurements for depicting the defect energetics.
From: Advanced spectroscopic techniques for characterizing defects in perovskite solar cells
a p-Type semiconductor junction showing the filling of trap states below the Fermi level by photogenerated electrons14. Copyright 2015, Royal Society of Chemistry. b Typical trap density of states (t-DOS) plotted against defect energy level obtained by TAS measurements. Reproduced with permission from ref. 34, copyright (Springer Nature, 2014).
