Fig. 2: Large-scale integration of perpendicular SOT-MRAM devices.
From: Recent progress in spin-orbit torque magnetic random-access memory
a Schematic of three-terminal SOT-MTJ devices illustrates the write operation enabled by charge current flow in the SOT track, inducing magnetization switching of the free layer, while read operations utilize electrical detection of TMR signal. b Transmission electron microscope images depict SOT-MTJ devices fabricated via CMOS-compatible processes on 300 mm wafers. W vias are used for applying current along the SOT track during write operations, while Cu vias serve for read operations. c High magnification image reveals MTJ cells with straight-profile free layers placed on continuous SOT tracks.
