Figure 1
From: Defect-free high Sn-content GeSn on insulator grown by rapid melting growth
(a) Schematic of sample structure before RMG. The amorphous GeSn stripe has a head contact with the Si substrate though seed window. The width, length, and thickness of the GeSn stripe are 2.2–2.7 μm, 10–200 μm, and 160–200 nm, respectively. (b) Top-view optical micrograph of GSOIs after RMG with 89 μm in length. The initial length of the stripes in grown region is 100 μm. Because of the Sn segregation, actual length of GSOI stripe reduced to 89 μm after RMG. (c) EBSD image of 89 μm-length GSOI stripes. (001) orientation and Si3N4 area exhibit red and dark color, respectively.
