Figure 1
From: Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
(a) Schematic image of the sample structure of the quasi-2D InGaN layer inserted in GaN matrix. Typical RHEED patterns after growth of the GaN buffer layer (b), single ML In(Ga)N (c) and GaN cap layer (d), respectively. (e) Typical AFM image of GaN cap layer.
