A hot-emitter transistor based on stimulated emission of heated carriers

Journal:

Nature

Published:

2024-08-14

DOI:

10.1038/s41586-024-07785-3

Affiliations:

4

Authors:

19

Go to article

Institutions	Authors	Share
Shenyang National Laboratory for Materials Science (SYNL), IMR CAS, China	8.333333	0.44
University of Science and Technology of China (USTC), China	8.333333	0.44
Peking University (PKU), China	2.000000	0.11
Shenzhen Institutes of Advanced Technology (SIAT), CAS, China	0.333333	0.02