Fig. 3: Photoresponse mechanism analyses. | Microsystems & Nanoengineering

Fig. 3: Photoresponse mechanism analyses.

From: High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction

Fig. 3

a Semi-log I-V curve (inset) and its linear fitting of Gr/Si Schottky junction to extract the parameters. b Semi-log I-V curve (inset) and its linear fitting of Gr/GdIG/Si Schottky junction. Energy band diagrams of c Gr/Si junction under dark condition, d Gr/GdIG/Si junction under dark condition, e Gr/GdIG/Si junction under illumination and f Gr/GdIG/Si junction under illumination with a reverse bias voltage. Here, ΦB, Vbi, e, EC, EV, EF(Gr), EF(Si), and Vbias represent the Schottky barrier height, built-in electric field, electronic charge, conduction band edge, valence band edge, Fermi level of Gr, Fermi level of Si, and the reverse bias voltage, respectively. The arrows indicate the direction of movement

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