Fig. 2 | Microsystems & Nanoengineering

Fig. 2

From: High-fidelity and clean nanotransfer lithography using structure-embedded and electrostatic-adhesive carriers

Fig. 2

a Schematic illustration of the high-fidelity lateral dimension maintenance and high transfer yield due to triboelectric electrostatic adhesion. b, c SEM images of Cu nanogratings before and after SENTL transfer, respectively. d Statistical box plot with the mean, maximum, minimum, and 25–75% range of the distribution of the line spacing and line edge roughness of Cu nanogratings before and after transfer. e, f KPFM surface topography and surface potential mapping of the PVA carrier film with embedded Au nanogratings immediately after separation and after charge release, respectively. g KPFM surface potential difference variation before and after charge release. Scale bars: 300 nm

Back to article page