Fig. 16: Preparation of suspended pressure diaphragms based on a single wafer.
From: Advances in high-performance MEMS pressure sensors: design, fabrication, and packaging
a Porous etching of the APSM process144. b Rearrangement of porous silicon144. c Epitaxial growth of membranes144. d SEM of a membrane wafer processed with the APSM process144. e SoN PC pressure sensor process flow151. f Initial shape of rectangular trenches with the SoN process151. g Pipe-shaped empty space due to hydrogen annealing151. h SEM image of the plate-shaped ESS with an area of 180 μm × 1500 μm and a thickness of 0.7 μm based on the SoN process151, i Enlarged view of the diaphragm based on SoN process
