Fig. 2: Characterization of the ultrabroadband absorber.
From: Ultrabroadband absorptive refractory plasmonics for photocatalytic hydrogen evolution reactions
SEM images of ultrabroadband absorbers with different deposition thicknesses of TiN: a 0 nm, b 20 nm, c 40 nm, and d 60 nm. (scale bar in inset image = 100 nm). e Depth profile of the atomic elements (Al, O, Ti, N) in the absorber. f Absorption spectrum of the absorbers with different TiN thicknesses and AM1.5 standard solar irradiation spectrum.
