Fig. 7: Device models including laterally varying lifetime and net-doping densities.
From: Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells
a Distribution of electron lifetime and b doping concentration corresponding to the cross-sectional microstructure obtained by EBSD (Supplementary Fig. 3). Simulation is based on Gaussian distributed experimental values. Note that negative doping concentrations denote those of acceptors, whereas positive values are those of donors.
