Fig. 2: Non-reciprocal charge transport in a 5-SL MnBi2Te4.
a Schematic illustrations of current direction dependent backscattering of edge transport. The chiral edge states are indicated by green arrows. b Resistance difference between positive and negative current as a function of the magnetic field. The measurement is performed at 11 K with top gate voltage of −2 V. c, d The non-reciprocal resistance measured at the right edge and left edge, respectively. The injected current IRMS is 5 μA. The measurements are performed at 11 K with top gate voltage of −2 V. Insets show schematic illustrations of the interplay between chiral edge states and 2D bulk transport channels (e.g., surface states) at different magnetic states.
