Fig. 2: Electrical characterizations of p-NDI based transistor. | Nature Communications

Fig. 2: Electrical characterizations of p-NDI based transistor.

From: Wearable in-sensor reservoir computing using optoelectronic polymers with through-space charge-transport characteristics for multi-task learning

Fig. 2

a The transfer curves of p-NDI based transistor under different light intensities for 5 s (Vd = 100 V). b The typical output curve of p-NDI based transistor under dark. The photocurrent response of p-NDI based transistor c under 700 μW cm−2 light irradiation with different pulse widths, d under 1 s light irradiation with different intensities. In panels c and d, the transistor was working in a ‘sampling’ mode at a constant Vg and Vd of 100 V with a holding time and interval of 0.01 s and 0.1 s, respectively.

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