Fig. 3: Gate-tuned giant anomalous Hall effects in device #4. | Nature Communications

Fig. 3: Gate-tuned giant anomalous Hall effects in device #4.

From: Electrically controlled superconductor-to-failed insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes

Fig. 3

a Gate-dependent anomalous Hall effect at 5 K after subtraction of the linear Hall background in the high field regions (ordinary Hall part). b Gate-dependent AHC and anomalous Hall angles (AHA). c Carrier density dependent AHC in different devices #1, #2, #3 and #4. The maximum AHC occurred with a hole carrier density of ~2 × 1022 cm−3.

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