Fig. 1: Characterization of vdW spacing of FPSe/FGT heterostructures. | Nature Communications

Fig. 1: Characterization of vdW spacing of FPSe/FGT heterostructures.

From: Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications

Fig. 1

a Mechanism and schematic diagram of EB effect enhanced by reducing the AFM/FM interlayer spacing. b The schematic of the transfer process of FPSe/FGT heterostructure (I) and LS process (II) on a SiO2/Si substrate (d1 > d2). Panel II shows a schematic diagram of the laser shocking process. c Equilibrium position for a FPSe/FGT system at the unstrained condition (top), strained condition (bottom) in molecular dynamics simulations. d, e The cross-sectional HAADF-STEM image of the FPSe/FGT heterostructure before (d) and after (e) LS. Inset: intensity profile (right panel) along white dashed line in the cross-sectional HAADF-STEM image (middle panel).

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