Table 1 High-harmonic generation efficiency comparison of different materials

From: Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor

Material

Phase

Thickness(i) (nm)

Pump field(ii) (V/Ã…)

Excitation λ (nm)

Bandgap (eV)

17th order rate (unit)(iii)

18th order rate (unit)(iv)

Reference

1 T’ MoSSe

Solid

~1

0.2

5000

~0.01

~100 (1)

~20 (0.2)

This work

Bi2Se3

Solid

~1–10

0.25

5000

~0.3

<0.01 (10−4)

<0.002 (2*10−5)

Ref. 16

MoS2

Solid

~1

0.4

5000

~1.8

<1 (10−2)

<0.1 (10−3)

Ref. 30

  1. Note: (i) Effective thickness is estimated and adopted here. (ii) The selected field strength of the excitation field. (iii)–(iv) The HHG efficiency is estimated and presented by emitted photon numbers/effective thickness/pump field. The numbers in the () are normalized to the 17th order for 1 T’ MoSSe. Note the linear normalization to the pump field underestimates the difference between 1 T’ MoSSe and other samples since HHG is a nonlinear process and incident field strength in 1 T’ MoSSe is relatively low.
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