Fig. 2: Light-induced giant enhancement of nonreciprocal transport.

a Schematic measurement configuration diagram of the optical modulation for the Hall-bar device of 2DEGs at the CZO/KTO heterointerface. Note that the in-plane magnetic field is perpendicular to the current direction. b Photoinduced change of the resistance of 2DEGs as a function of the incident light wavelength at 5 K, showing that the irradiation at 330 nm with the energy (~3.76 eV) slightly exceeding the optical bandgap of KTO leads to the largest photoconductance. c Schematic band structure diagram of the light-gating mechanism at the CZO/KTO interface. The thicker grey arrows denote the more photoexcited electrons. d In-plane MR curves at various wavelengths. The measurements are performed for both I = ±40 μA at 5 K. The MR curves are shifted vertically for clarity. e The ratio of the resistance change (\(\Delta\)R/R₀ extracted from d) as a function of magnetic field at various wavelengths. f Wavelength-dependent nonreciprocal transport coefficient extracted from (e). The fitting range of the magnetic field is set to be ±0.7 T. The corresponding curves and parameters of the dark condition are also included in (b,d–f) for comparison. g The summarized graph for γ of various material systems, such as InSb/CdTe¹⁷, BiTeBr²⁶, Bi₂Se₃/Cu⁵⁴, (Ge,Mn)Te¹⁶ and LaAlO₃/SrTiO₃²², that utilize various methods for the nonreciprocal transport modulation.