Fig. 4: Sliding and reversal dynamics under e-beam illumination together with the results of first-principles calculations.
From: Atomic-level polarization reversal in sliding ferroelectric semiconductors
a Schematic of the in-situ e-beam illumination of InSe:Y lamella. Atomic-scale single-layer (b) and bilayer (c) sliding-induced OOP polarization switching at initial (state I) and final (state II) states (i), and the overlapped states (ii) together with the structural models showing the polarization switching at initial and final states (iii) and the intensity line profiles of the initial and final states of interlayer sliding (iv). d Schematic for sliding paths from one ferroelectric state (ABC) to the other bistable state (ACB); path 1 via the simultaneous forward (backward) sliding of the single B (C) layer with a 1/3 in-plane unit cell, and path 2 via the simultaneous sliding of bilayers (i.e., the metastable ACAC stacking of ε-InSe phase). e Calculated barriers for sliding paths 1 and 2. Notice that the results of the path 2 (Yi) correspond to the case in our experiments after Y-doping.
