Fig. 3: Atomic doping and heterogeneous MOS via MPL.

a, b EDS spectrum taken from an internal beam region of Al-doped zinc-containing patterns after pyrolysis, the patterns were fabricated at 25 mW and 2 mm s⁻¹. Scale bar: 10 μm. c High-resolution TEM images obtained from the pyrolyzed Al-doped zinc-containing sample. Scale bar: 2 nm. d XRD spectra of pyrolyzed zinc-containing sample and pyrolyzed Al-doped zinc-containing sample. e–g Manufacturing schematic diagram of heterogeneous MOS pattern via MPL and h–j corresponding optical microscope images (25 mW and 2 mm s⁻¹ for (h), 20 mW and 3 mm s⁻¹ for (i), and 20 mW and 10 mm s⁻¹ for (j). Scale bar: 10 μm. k–m EDS spectrum taken from an internal beam region of different positions of the QR code. n EDS maps of the QR code pattern. Scale bar: 10 μm. o, p Schematic diagram of heterogeneous multi-layer MOS (25 mW and 2 mm s⁻¹ for ZnO, 15 mW and 5 mm s⁻¹ for CuO, and 15 mW and 10 mm s⁻¹ for ZrO₂) and corresponding SEM images. Scale bar: 10 μm.