Fig. 3: Oxygen stoichiometry control before and after voltage programming.
From: Interface-engineered non-volatile visible-blind photodetector for in-sensor computing
a STEM image of the pristine CeO2/STO interface. STEM-EELS scans of (b, d, and f) Ce M-edge and (c, e, and g) Ti L-edge: pristine state (b, c); negative regulation (1000 pulses of − 100 V voltage programming, each with a pulse width of 0.5 s) (d, e); and positive regulation (1,000 pulses of + 100 V voltage programming, each with a pulse width of 0.5 s) (f, g), across the interface area, as hinted by the orange frame in (a). Left: STEM-EELS 2D scan. Middle: the corresponding layer-by-layer EELS analysis. Right: M5/M4 and \(\frac{I({e}_{g}({L}_{3}))-{I}_{0}}{I({t}_{2g}({L}_{3}))-{I}_{0}}\) ratio distribution maps for each layer. h Schematic energy band diagrams and electron-hole pair generation after different voltage programming.
