Fig. 1: Output characteristics and peak-to-valley ratio (PVR) of monolayer graphene resonant tunneling transistors (RTTs) with different numbers of hexagonal boron nitride (h-BN) barrier atomic layers.
From: Toward high-current-density and high-frequency graphene resonant tunneling transistors
a Structure schematic of graphene RTT. b Optical micrograph of a fabricated graphene RTT. The red and blue dashed lines indicate the ranges of the top and bottom graphene flakes, respectively. c–g Output characteristics (c–e) and PVRs (f, g) of a four-layer (c, f), a trilayer (d, g), and a bilayer (e) h-BN barrier RTT, in which the drain current Id and drain current density Jd change with the drain voltage Vd under different gate voltages Vg. The inset of (d) shows the output characteristics under Vg = −4 V. The arrows indicate forward and backward sweeps. h Output characteristics of the trilayer h-BN barrier RTT with the series resistance deducted. The inset shows the transfer characteristics of a graphene field-effect transistor (FET) under Vd = 10 mV, which is used to deduct the series resistance.
