Extended Data Fig. 3: Endurance and high temperature retention characteristics of FeFET. | Nature Nanotechnology

Extended Data Fig. 3: Endurance and high temperature retention characteristics of FeFET.

From: An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Extended Data Fig. 3

a, Schematic of measurement set-up for endurance. b-e, Endurance performance of FeFET with different AFE/ADE. The program and erase voltages are ±8 V (2.86 MV/cm), respectively, with 20 ns period. f. The extrapolated 10-year data retention of I-type FeFET (AFE/ADE = 0.053) at 85oC and 125oC, shows over 6 decades of on/off ratio @10-year. The off currents kept under the measure precision and did not show any potential of rise, thus we saw them as constant approximately. g, 128-level potentiation/depression curves for T-type device (AFE/ADE = 0.43) after 0 (pristine), 5E7, and 1E8 cycles, showing great uniformity. The α(P) and α(D) stand for the fitted nonlinearity factors for potentiation and depression, respectively. h, 16-level (chosen from 128 states) data retention of an I-type device (AFE/ADE = 0.053) after 1E5 endurance cycles under 85oC accelerated test.

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