Extended Data Fig. 6: Dependence of the band-edge excitons on the out-of-plane electric field in a dual-gate monolayer WSe2 transistor device.
Stark shift is not observable for band-edge excitons in monolayer WSe2.
Extended Data Fig. 6: Dependence of the band-edge excitons on the out-of-plane electric field in a dual-gate monolayer WSe2 transistor device. | Nature Nanotechnology
